GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates
Abstract
In this study, we report synthesis of large area (> 2 cm^2) crack-free GaInP/GaAs double junction solar cells on 50 mm diameter Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. Defect removal from the template film and film surface prior to epitaxial growth was found to be critical to achievement of high open circuit voltage and efficiency. Cells grown on templates prepared with chemical mechanical polishing in addition a wet chemical etch show comparable performance to control devices grown on bulk Ge substrates. Current-voltage (I–V) data under AM 1.5 illumination indicate that the short circuit current is comparable in templated and control cells, but the open circuit voltage is slightly lower (2.08V vs. 2.16V). Spectral response measurements indicate a drop in open circuit voltage due to a slight lowering of the top GaInP cell band gap. The drop in band gap is due to a difference in the indium composition in the two samples caused by the different miscut (9° vs. 6°) of the two kinds of substrates.
Additional Information
© 2008 IEEE. The authors would like to acknowledge the National Renewable Energy Laboratory through subcontract XAT-4-33624-10 for support of the Caltech and Spectrolab portions of this work. One of us (MJA) acknowledges fellowship support from the National Science Foundation. Support for TEM work was provided by the Caltech Kavli Nanoscience Institute and Materials Science TEM facilities supported by the MRSEC Program of the National Science Foundation under Award Number DMR-0520565.Attached Files
Published - 04922585.pdf
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Additional details
- Eprint ID
- 93683
- Resolver ID
- CaltechAUTHORS:20190308-152332663
- National Renewable Energy Laboratory
- XAT-4-33624-10
- NSF
- DMR-0520565
- Kavli Nanoscience Institute
- Created
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2019-03-08Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute