Published March 10, 2008
| Published
Journal Article
Open
GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates
Abstract
Large area, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition on Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.
Additional Information
© 2008 American Institute of Physics. Received 10 January 2008; accepted 4 February 2008; published 11 March 2008. The authors would like to acknowledge the National Renewable Energy Laboratory through Subcontract No. XAT-4-33624-10 for support of the Caltech and Spectrolab portions of this work. One of us (M.J.A.) acknowledges fellowship support from the National Science Foundation. Support for TEM work was provided by the Caltech Kavli Nanoscience Institute and Materials Science TEM facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR-0520565.Attached Files
Published - ARCapl08.pdf
Files
ARCapl08.pdf
Files
(388.2 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:a2be0af0c2851e95fef4389a5a10b0f2
|
388.2 kB | Preview Download |
Additional details
- Eprint ID
- 9769
- Resolver ID
- CaltechAUTHORS:ARCapl08
- XAT-4-33624-10
- National Renewable Energy Laboratory
- NSF Graduate Research Fellowship
- Kavli Nanoscience Institute
- DMR-0520565
- NSF
- Created
-
2008-03-14Created from EPrint's datestamp field
- Updated
-
2023-06-01Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute