Rank Modulation for Flash Memories
Abstract
We explore a novel data representation scheme for multi-level flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The only allowed charge-placement mechanism is a "push-to-the-top" operation which takes a single cell of the set and makes it the top-charged cell. The resulting scheme eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells. We present unrestricted Gray codes spanning all possible n-cell states and using only "push-to-the-top" operations, and also construct balanced Gray codes. We also investigate optimal rewriting schemes for translating arbitrary input alphabet into n-cell states which minimize the number of programming operations.
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Additional details
- Eprint ID
- 26116
- Resolver ID
- CaltechPARADISE:2008.ETR086
- Created
-
2008-02-05Created from EPrint's datestamp field
- Updated
-
2021-08-18Created from EPrint's last_modified field
- Caltech groups
- Parallel and Distributed Systems Group