Published June 1992
| Published
Journal Article
Open
The gain and carrier density in semiconductor lasers under steady-state and transient conditions
- Creators
-
Zhao, Bin
- Chen, T. R.
- Yariv, Amnon
Chicago
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Abstract
The carrier distribution functions in a semiconductor crystal in the presence of a strong optical field are obtained. These are used to derive expressions for the gain dependence on the carrier density and on the optical intensity-the gain suppression effect. A general expression for high-order nonlinear gain coefficients is obtained. This formalism is used to describe the carrier and power dynamics in semiconductor lasers above and below threshold in the static and transient regimes.
Additional Information
© 1992 IEEE. Reprinted with permission. Manuscript received March 6, 1991; revised August 30, 1992. This work was supported by the Office of Naval Research, the National Science Foundation, and the Army Research Office.Attached Files
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Additional details
- Eprint ID
- 6842
- Resolver ID
- CaltechAUTHORS:ZHAieeejqe92
- Office of Naval Research (ONR)
- NSF
- Army Research Office (ARO)
- Created
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2006-12-26Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field