Published July 2, 2007
| Published
Journal Article
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High efficiency InGaAs solar cells on Si by InP layer transfer
Abstract
InP/Si substrates were fabricated through wafer bonding and helium-induced exfoliation of InP, and InGaAs solar cells lattice matched to bulk InP were grown on these substrates using metal-organic chemical-vapor deposition. The photovoltaic characteristics of the InGaAs cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epiready InP substrates, thus providing a demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications.
Additional Information
© 2007 American Institute of Physics (Received 29 April 2007; accepted 11 June 2007; published online 3 July 2007) The authors would like to thank Anna Fontcuberta i Morral of the Walter Schottky Institute for her work in the development of the InP/Si substrate fabrication process. The work at Aonex Technologies was supported by a Small Business Innovation Research (SBIR) awarded and administered by the Air Force Research Laboratory (AFRL). The Caltech portion of this work was supported by the National Renewable Energy Laboratory.Attached Files
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Additional details
- Eprint ID
- 8164
- Resolver ID
- CaltechAUTHORS:ZAHapl07
- Air Force Research Laboratory (AFRL)
- National Renewable Energy Laboratory
- Created
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2007-07-31Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field