Published June 19, 2006
| Published
Journal Article
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Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces
Abstract
Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS). The STS data showed remarkably low levels of midgap states on the CH3- and C2H5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.
Additional Information
© 2006 American Institute of Physics (Received 15 December 2005; accepted 30 March 2006; published online 22 June 2006) The authors acknowledge the National Science Foundation, Grant Nos. CHE-0213589 (NSL) and NSF-CCF-05204490, and the MARCO Materials Structures and Devices Focus Center (JRH) for support of this research. One of the authors (L.J.W.) thanks the NSF for a graduate fellowship. The authors thank Peigen Cao for helpful discussions and technical assistance.Attached Files
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Additional details
- Eprint ID
- 3870
- Resolver ID
- CaltechAUTHORS:YUHapl06
- CHE-0213589
- NSF
- CCF-05204490
- NSF
- Microelectronics Advanced Research Corporation (MARCO)
- NSF Graduate Research Fellowship
- Created
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2006-07-17Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field