Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy
Abstract
We have used x-ray photoelectron spectroscopy (XPS) to measure the valence band offset in situ for CdSe/ZnTe (100) heterojunctions grown by molecular-beam epitaxy. XPS measurements were performed for films of CdSe (100) and ZnTe (100), and for heterojunctions consisting of either ~25 Å of CdSe grown on ZnTe or ~25 Å of ZnTe grown on CdSe. Observations of reflection high energy electron diffraction patterns indicated that CdSe films deposited on ZnTe were grown in cubic zinc blende form, rather than the natural wurtzite structure of CdSe. Our measurements yielded a CdSe/ZnTe valence band offset DeltaEv=0.64±0.07 eV. The corresponding conduction band offset for CdSe/ZnTe is DeltaEc=1.22±0.07 eV for room temperature band gaps for ZnTe and for cubic CdSe of 2.25 and 1.67 eV, respectively.
Additional Information
© 1991 American Vacuum Society. (Received 30 January 1991; accepted 21 March 1991) Two of us (E.T.Y. and M.C.P) would like to acknowledge financial support from the AT&T Foundation and the IBM Corporation, respectively. Part of this work was supported by the Office of Naval Research under Grant No. N0001490-J-1742.Files
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2008-05-21Created from EPrint's datestamp field
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