Commutativity of the GaAs/AlAs (100) band offset
- Creators
- Yu, E. T.
- Chow, D. H.
- McGill, T. C.
Abstract
X-ray photoelectron spectroscopy is used to measure the valence-band offset in situ for GaAs/AlAs (100) heterojunctions grown by molecular beam epitaxy. Ga 3d and Al 2p core level to valence-band edge binding energy differences are measured in GaAs (100) and AlAs (100) samples, respectively, and the Al 2p to Ga 3d core level binding energy difference is measured in GaAs–AlAs (100) and AlAs–GaAs (100) heterojunctions. Measurements of the Al 2p to Ga 3d core level energy separations indicate that the band offset for GaAs/AlAs (100) is commutative; the value we obtain is DeltaEv=0.46±0.07 eV. Our observation of commutativity is believed to be a consequence of the high quality of our GaAs/AlAs (100) heterojunctions, and of the inherent commutativity of the GaAs/AlAs (100) band offset.
Additional Information
© 1989 American Vacuum Society. Received 22 September 1988; accepted 22 September 1988. We would like to acknowledge useful discussions with T.K. Woodward, M.B. Johnson, J.O. McCaldin, and O.J. Marsh, and the valuable technical assistance of B.H. Cole. Discussions with R.W. Grant and J.R. Waldrop were especially helpful in the early phases of this work, particularly in assessing the influence ofsurface states on the analysis of the (100) GaAs valence-band spectra. One of us (E.T.Y.) is grateful for financial support from a National Science Foundation Graduate Fellowship. Part of this work was supported by the Office of Naval Research under Contract No. N000l4-84-K-0501.Attached Files
Published - YUEjvstb89.pdf
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Additional details
- Eprint ID
- 12707
- Resolver ID
- CaltechAUTHORS:YUEjvstb89
- National Science Foundation
- N000l4-84-K-0501
- Office of Naval Research
- Created
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2008-12-21Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field