Published August 21, 1989
| Published
Journal Article
Open
Hole tunneling times in GaAs/AlAs double-barrier structures
- Creators
- Yu, E. T.
- Jackson, M. K.
- McGill, T. C.
Chicago
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Abstract
We have calculated hole tunneling times in GaAs/AlAs double-barrier structures taking quantum well band-mixing effects into account. Our results indicate that for sufficiently high hole temperatures and concentrations, band-mixing effects reduce average hole tunneling times from the pure heavy hole value to values comparable to electron tunneling times in the same structure. For very low hole temperatures and concentrations, band mixing is less important and average hole tunneling times should approach the pure heavy hole value. These results provide an explanation for previously reported experimental results in which electrons and holes were found to be characterized by very similar tunneling times.
Additional Information
Copyright © 1989 American Institute of Physics. Received 31 March 1989; accepted 9 June 1989. We would like to acknowledge useful discussions with Y. Rajakarunanayake and D.Z.-Y. Ting. Two of us (E.T.Y. and M.K.J.) would like to acknowledge support from the National Science Foundation and the Natural Science and Engineering Research Council of Canada, respectively. Part of the work was supported by the Office of Naval Research under grant No. N00014-89-J-1141.Attached Files
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Additional details
- Eprint ID
- 12721
- Resolver ID
- CaltechAUTHORS:YUEapl89
- National Science Foundation
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Office of Naval Research
- N00014-89-J-1141
- Created
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2008-12-21Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field