Published April 14, 1988
| public
Journal Article
Open
High-speed front-illuminated GaInAsP/InP pin photodiode
- Creators
- Yi, M. B.
- Paslaski, J.
- Liu, Y. Y.
- Chen, T. R.
- Yariv, A.
Chicago
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Abstract
Describes a high-speed front-illuminated GaInAsP/InP pin photodiode for use at the optical wavelength of 1.3 μm. The device is grown on an n+-InP substrate and uses polyimide both as a passivation layer and as a bonding pad holder to reduce parasitic capacitance. An optoelectronic sampling measurement of the impulse response shows a pulsewidth (FWHM) of 28 ps. A 3 dB bandwidth in excess of 18 GHz has been achieved.
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Additional details
- Eprint ID
- 736
- Resolver ID
- CaltechAUTHORS:YIMel88
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2005-09-21Created from EPrint's datestamp field
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