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Published January 8, 2001 | Published
Journal Article Open

Monocrystalline silicon carbide nanoelectromechanical systems

Abstract

SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators.

Additional Information

© 2001 American Institute of Physics (Received 21 August 2000; accepted 15 November 2000) The authors gratefully acknowledge support for this work from DARPA MTO/MEMS under Grant Nos. DABT63-98-1-0012 (Caltech) and DABT63-98-1-0010 (CWRU). The authors would like to thank Tomoyuki Yoshie for his technical assistance.

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August 21, 2023
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