Published February 16, 1995
| public
Journal Article
Open
Direct measurement of doping density and barrier lowering effect with bias in quantum wells
- Creators
- Xu, Y.
- Shakouri, A.
- Yariv, A.
- Krabach, T.
- Dejewski, S.
Chicago
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Abstract
An experimental method for determining the doping density in thin-sheet semiconductor material such as quantum wells (QWs) is demonstrated in GaAs/AlGaAs multiquantum-well infra-red photodetectors. The results agree very well with the conventional Hall measurement method. Barrier lowering effect with bias in QWs is determined experimentally.
Additional Information
© IEE 1995. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. This work is supported by the Advanced Research Projects Agency (ARPA), and by the US Air Force Office of Scientific Research.Files
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Additional details
- Eprint ID
- 749
- Resolver ID
- CaltechAUTHORS:XUYel95
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2005-09-27Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field