High efficiency single quantum well graded-index separate-confinement heterostructure lasers fabricated with MeV oxygen ion implantation
Abstract
Single quantum well AlGaAs/GaAs graded-index separate-confinement heterostructure lasers have been fabricated using MeV oxygen ion implantation plus optimized subsequent thermal annealing. A high differential quantum efficiency of 85% has been obtained in a 360-µm-long and 10-µm-wide stripe geometry device. The results have also demonstrated that excellent electrical isolation (breakdown voltage of over 30 V) and low threshold currents (22 mA) can be obtained with MeV oxygen ion isolation. It is suggested that oxygen ion implantation induced selective carrier compensation and compositional disordering in the quantum well region as well as radiation-induced lattice disordering in AlxGa1–xAs/GaAs may be mostly responsible for the buried layer modification in this fabrication process.
Additional Information
© 1989 American Institute of Physics. (Received 26 September 1988; accepted 6 December 1988) The authors wish to express their gratitude to M. Mittlstein for his assistance in the measurements. This work was supported in part by the National Science Foundation (DMR86-15641) and the Office of Naval Research (contract No. N00014-85-K-0032).Attached Files
Published - XIOapl89.pdf
Files
| Name | Size | Download all |
|---|---|---|
|
md5:40707cf4af9fd19520deec05d088713c
|
664.6 kB | Preview Download |
Additional details
- Eprint ID
- 5669
- Resolver ID
- CaltechAUTHORS:XIOapl89
- DMR86-15641
- NSF
- N00014-85-K-0032
- Office of Naval Research (ONR)
- Created
-
2006-10-27Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field