Channeling measurements of lattice disorder at the GaAs–InAs(100) heterojunction

Abstract

Rutherford backscattering spectrometry (RBS) combined with channeling techniques has been used to analyze the lattice disorder present in InAs thin films less than 1 µm thick grown on GaAs(100) substrates by molecular beam epitaxy (MBE). The axial channeling yields along [100], [110], and [111] reveal that roughly one quarter of the atoms in the thin films are out of registry with the InAs lattice at the heterojunction interface. The amount of lattice disorder decreases rapidly to undetectable (<1%) amounts at film thicknesses greater than 0.5 µm. The interface disorder arises as a result of the >7% lattice mismatch between GaAs and InAs.

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