Transistor oscillator and amplifier grids
Abstract
Although quasi-optical techniques are applicable to a large variety of solid-state devices, special attention is given to transistors, which are attractive because they can be used as either amplifiers or oscillators. Experimental results for MESFET bar-grid and planar grid oscillators are presented. A MESFET grid amplifier that receives only vertically polarized waves at the input and radiates horizontally polarized waves at the output is discussed. These planar grids can be scaled for operation at millimeter- and submillimeter-wave frequencies. By using modern IC fabrication technology, planar grid oscillators and amplifiers containing thousands of devices can be built, thereby realizing an efficient means for large-scale power combining.
Additional Information
© Copyright 1992 IEEE. Reprinted with permission Invited Paper. Manuscript received October 4, 1991; revised February 26, 1992. This research was supported by the Army Research Office, the Northrop Corporation, and a fellowship from the Rockwell International Trust. J. Hacker holds an NSERC Fellowship from Canada and M. De Lisio holds an NSF Fellowship.Files
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Additional details
- Eprint ID
- 3137
- Resolver ID
- CaltechAUTHORS:WEIprocieee92
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2006-05-16Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field