Published April 1, 2006
| Published
Journal Article
Open
Photoluminescence quantum efficiency of dense silicon nanocrystal ensembles in SiO2
Abstract
The photoluminescence decay characteristics of silicon nanocrystals in dense ensembles fabricated by ion implantation into silicon dioxide are observed to vary in proportion to the calculated local density of optical states. A comparison of the experimental 1/e photoluminescence decay rates to the expected spontaneous emission rate modification yields values for the internal quantum efficiency and the intrinsic radiative decay rate of silicon nanocrystals. A photoluminescence quantum efficiency as high as 59%±9% is found for nanocrystals emitting at 750 nm at low excitation power. A power dependent nonradiative decay mechanism reduces the quantum efficiency at high pump intensity.
Additional Information
© 2006 The American Physical Society (Received 13 September 2005; revised 27 February 2006; published 28 April 2006) This work was supported by the Air Force Office of Scientific Research (MURI No. FA9550-04-1-0434) and the research program of FOM, which is financially supported by NWO. Technical development by Nicholas Chiang is gratefully acknowledged.Attached Files
Published - WALprb06.pdf
Files
WALprb06.pdf
Files
(388.7 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:ba9d24dc3cc4eff225efd08200a0910c
|
388.7 kB | Preview Download |
Additional details
- Eprint ID
- 6705
- Resolver ID
- CaltechAUTHORS:WALprb06
- Air Force Office of Scientific Research (AFOSR)
- FA9550-04-1-0434
- Stichting voor Fundamenteel Onderzoek der Materie (FOM)
- Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO)
- Created
-
2006-12-18Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field