Published September 27, 2004
| Published
Journal Article
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Silicon optical nanocrystal memory
Chicago
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Abstract
We describe the operation of a silicon optical nanocrystal memory device. The programmed logic state of the device is read optically by the detection of high or low photoluminescence intensity. The suppression of excitonic photoluminescence is attributed to the onset of fast nonradiative Auger recombination in the presence of an excess charge carrier. The device can be programmed and erased electrically via charge injection and optically via internal photoemission. Photoluminescence suppression of up to 80% is demonstrated with data retention times of up to several minutes at room temperature.
Additional Information
© 2004 American Institute of Physics. Received 19 January 2004; accepted 22 July 2004. This work was supported by Intel Corporation and NASA. One of the authors (R.J.W.) gratefully acknowledges NDSEG Fellowship support through the Army Research Office.Attached Files
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Additional details
- Eprint ID
- 1936
- Resolver ID
- CaltechAUTHORS:WALapl04
- Intel
- NASA
- National Defense Science and Engineering Graduate (NDSEG) Fellowship
- Army Research Office (ARO)
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2006-02-24Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field