Published July 15, 1983
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Journal Article
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Occupation fluctuation noise: A fundamental source of linewidth broadening in semiconductor lasers
- Creators
-
Vahala, Kerry
- Yariv, Amnon
Chicago
Abstract
In this letter we consider the effect of fast thermal fluctuations of electronic state occupancy on the field spectrum of semiconductor lasers and derive for the first time an expression for the resulting power independent linewidth contribution. The magnitude and temperature dependence of this linewidth component agree reasonably well with measurements of a power independent linewidth made by Welford and Mooradian.
Additional Information
Copyright © 1983 American Institute of Physics (Received 22 February 1983; accepted 19 April 1983) The author are grateful for discussions with L. C. Chiu. This work was supported by the National Science Foundation, the Office of Naval Research, and Rockwell International. One author (KJV) ackonwledges support from the IBM Corporation.Files
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- 5835
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- CaltechAUTHORS:VAHapl83c
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