Published July 15, 1982
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Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit
Chicago
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Abstract
A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate. At cw operation, the device has a direct modulation bandwidth of at least 4 GHz.
Additional Information
Copyright © 1982 American Institute of Physics Received 22 March 1982; accepted for publication 4 May 1992 This work was supported by the Defense Advanced Research Projects Agency.Files
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