Published July 15, 1982
| public
Journal Article
Open
Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit
Abstract
A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate. At cw operation, the device has a direct modulation bandwidth of at least 4 GHz.
Additional Information
Copyright © 1982 American Institute of Physics Received 22 March 1982; accepted for publication 4 May 1992 This work was supported by the Defense Advanced Research Projects Agency.Files
URYapl82.pdf
Files
(265.9 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:12e6f959910b45300f0f1c9d7a2335d3
|
265.9 kB | Preview Download |
Additional details
- Eprint ID
- 5837
- Resolver ID
- CaltechAUTHORS:URYapl82
- Created
-
2006-11-04Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field