Published July 1992
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Journal Article
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Effect of Gamma–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures
- Creators
- Ting, D. Z.-Y.
- McGill, T. C.
Abstract
The effect of Gamma–X mixing on electron tunneling time in GaAs/AlAs symmetric double barrier heterostructures is studied theoretically using an empirical tight-binding band structure model. It is found that the Gamma quasibound state tunneling times can be shortened or lengthened by Gamma–X mixing, depending on whether the AlAs barriers consist of an even or odd number of monolayers. This is attributed to the interference between the Gamma and X conduction channels in the AlAs barriers.
Additional Information
© 1992 American Vacuum Society. (Received 28 January 1992; accepted 13 March 1992) The authors would like to thank M.K. Jackson and J.N. Schulman for helpful discussions. This work is supported by the Office of Naval Research (ONR) under Grant No. N00014-89-J-1141.Files
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- Eprint ID
- 10841
- Resolver ID
- CaltechAUTHORS:TINjvstb92
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2008-06-12Created from EPrint's datestamp field
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