Published July 2008
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Journal Article
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SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers
Abstract
We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding Teff of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors' knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date.
Additional Information
© Copyright 2008 IEEE. Reprinted with permission. Manuscript received January 10, 2008; revised March 17, 2008. [Date Published in Issue: 2008-06-24] This work was supported by Research Institute Fellows Council, Georgia Institute of Technology (Georgia Tech), NASA-ETDP, JPL, and the members of the SiGe Devices and Circuits Group, Georgia Tech. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org.Attached Files
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Additional details
- Eprint ID
- 11343
- Resolver ID
- CaltechAUTHORS:THRieeemwcl08
- Research Institute Fellows Council, Georgia Tech
- NASA-ETDP
- Jet Propulsion Laboratory
- SiGe Devices and Circuits Group, Georgia Tech
- Created
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2008-08-06Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field