Electronic structure of amorphous Mo-Ru-Si alloys

Abstract

The results of x-ray photoemission spectroscopy (XPS) and electrical resistivity measurements on amorphous metal alloys of the form (Mo1−xRux)80Si20 are reported. The XPS valence band spectra are dominated by the Mo-4d subbands and the electronic structure of the amorphous alloys can best be described in the virtual crystal limit of the coherent potential approximation (CPA) formalism. The density of electronic states at the Fermi level sharply decreases in the alloys as the Ru/Mo ratio is increased. Associated with this drop is an increase in electrical resistivity and decrease in the superconducting transition temperatures of the alloys. These relationships are discussed in the context of current theories of the electrical resistivity and superconductivity in amorphous alloys.

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