Published May 1, 1979
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Journal Article
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Pulsed-laser annealing of implanted layers in GaAs
Abstract
Semi-insulating Si-implanted GaAs has been irradiated by a ruby-laser pulse (lambda=0.694 µm, tp=15 ns) without using an encapsulant. Hall-effect measurements indicate that the values of sheet resistance, effective sheet electron concentration, and effective electron mobilities are roughly comparable to those of conventionally annealed samples. TEM micrographs show a difference in the defect structure after these two types of annealing.
Additional Information
Copyright © 1979 American Institute of Physics. (Received 6 November 1978; accepted for publication 7 February 1979) This work was supported at Caltech, in part, by ONR (L.R. Cooper). We would like to thank G. Vitali and I. Catalano for assistance with laser irradiation.Files
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