Compensating impurity effect on epitaxial regrowth rate of amorphized Si

Creators: Suni, I.; Göltz, G.; Grimaldi, M. G.; Nicolet, M-A.; Lau, S. S.

Abstract

The epitaxial regrowth of ion-implanted amorphous layers on <100> Si with partly compensated doping profiles of 11B, 75As, and 31P was studied. Single implants of these impurities are found to increase the regrowth rate at 475 and 500°C. The compensated layers with equal concentrations of 11B and 31P or 11B and 75As show a strong decrease of the regrowth whereas for the layers with overlapping 75As and 31P profiles no compensation has been found.

Additional Information

© 1982 American Institute of Physics. Received 17 July 1981; accepted for publication 28 October 1981. The authors wish to thank T.W. Sigmon and A. Lietoila, Stanford University, who obtained computer-based implantation profiles for comparison with those given in this letter. Thanks are also due to D. Turnbull, Harvard University, and R. Walser and R. Bene, University of Texas at Austin, for valuable comments. This work was executed under the benevolent U.R. Fund of the Bohmische Physical Society (B.M. Ullrich). The implantation part of this study was financially supported by the U.S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D. Bickler).

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