Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

Creators: Stein, B. L.; Yu, E. T.; Croke, E. T.; Hunter, A. T.; Laursen, T.; Mayer, J. W.; Ahn, C. C.

Abstract

Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C.

Additional Information

©1998 American Institute of Physics. (Received 16 March 1998; accepted 30 May 1998) The authors would like to acknowledge support from DARPA MDA972-95-3-0047 for work at UCSD, HRL, and ASU and from ONR Grant No. N00014-95-1-0996 for work at UCSD. One of the authors (E.T.Y.) would like to acknowledge receipt of a Sloan Research Fellowship.

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