Published November 1987
| Published
Journal Article
Open
Summary Abstract: Reactively sputtered RuO2 and Mo–O diffusion barriers
Chicago
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Abstract
In this report, we summarize the important aspects of the deposition behavior of RuOz and Mo-O films formed by radio frequency (rf) reactive sputtering and their diffusion barrier properties against interdiffusion in Al-Si couples.
Additional Information
© 1987 American Vacuum Society. (Received 15 June 1987; accepted 3 August 1987) The authors gratefully acknowledge the financial support from the Army Research Office under Contract No. DAAG29-85-K-0192, and Intel Corporation.Attached Files
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Additional details
- Eprint ID
- 11679
- Resolver ID
- CaltechAUTHORS:SOFjvstb87
- Army Research Office
- DAAG29-85-K-0192
- Intel Corp.
- Created
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2008-09-18Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field