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Published September 11, 1989 | public
Journal Article Open

New negative differential resistance device based on resonant interband tunneling

Abstract

We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure.

Additional Information

© 1989 American Institute of Physics. Received 30 May 1989; accepted 6 July 1989. This work was supported by the Office of Naval Research under contract No. NO00014-89-J-1141. One of us (JRS) wishes to thank the Boncompagni-Ludovisi foundation for financial support. Another (DHC) is thankful to TRW for financial support.

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August 22, 2023
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