Published April 1983
| Published
Journal Article
Open
A new infrared detector using electron emission from multiple quantum wells
Chicago
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Abstract
A new type of infrared photodetector using free electron absorption in a heavily doped GaAs/GaAlAs quantum well structure has been demonstrated. Preliminary results indicate a strong response in the near infrared with a responsivity conservatively estimated at 200 A/W. The structure can potentially be tailored during fabrication for use in several infrared bands of interest, including the 3 to 5 micron band and the 8 to 10 micron band.
Additional Information
© 1983 American Vacuum Society. (Received 22 December 1982; accepted 4 February 1983) This work was supported by the National Science Foundation and the Office of Naval Research. One of us (JSS) gratefully acknowledges the support of the Fannie and John Hertz Foundation.Attached Files
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Additional details
- Eprint ID
- 11683
- Resolver ID
- CaltechAUTHORS:SMIjvstb83
- National Science Foundation
- Office of Naval Research
- Fannie and John Hertz Foundation
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2008-09-18Created from EPrint's datestamp field
- Updated
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2023-10-17Created from EPrint's last_modified field