Published October 1, 1975
| public
Journal Article
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Embedded heterostructure epitaxy: A technique for two-dimensional thin-film definition
- Creators
- Samid, I.
- Lee, C. P.
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Gover, A.
- Yariv, A.
Abstract
Selective multilayer epitaxial growth of GaAs-Ga1–xAlxAs through stripe openings in Al2O3 mask is reported. The technique results in prismatic layers of GaAs and Ga1–xAlxAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The crystal habit (shape) has features which are favorable for fabrication of cw injection lasers, laser arrays, and integrated optics components which require planar definition.
Additional Information
Copyright © 1975 American Institute of Physics. Received 2 June 1975. The authors would like to acknowledge the guidance of Dr. M.B. Panish and S. Sumski on epitaxial crystal growth, the help of Dr. H. Garvin from Hughes Research Center in sputtering the Al2O3 layers, and helpful discussions with Professor J. McCaldin of Caltech.Files
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Additional details
- Eprint ID
- 10063
- Resolver ID
- CaltechAUTHORS:SAMapl75
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