Laser annealing of silicon on sapphire

Creators: Roulet, M. E.; Schwob, P.; Affolter, K.; Lüthy, W.; von Allmen, M.; Fallavier, M.; Mackowski, J. M.; Nicolet, M. A.; Thomas, J. P.

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Abstract

Silicon-implanted silicon-on-sapphire wafers have been annealed by 50-ns pulses from a Q-switched Nd : YAG laser. The samples have been analyzed by channeling and by omega-scan x-ray double diffraction. After irradiation with pulses of a fluence of about 5 J cm^–2 the crystalline quality of the silicon layer is found to be better than in the as-grown state.

Additional Information

Copyright © 1979 American Institute of Physics Received 5 December 1978; accepted for publication 6 February 1979 The authors would like to thank Dr. H. Luginbühl of CEH for the ion implantation, L. Simmen, R. Kirsch, and the Atomic Collision Group of the IPn, Lyon, for technical assistance, and Dr. G. Rolland of LETI, Grenbole, for the x-ray double diffraction measurements. One of the authors (M.E.R.) is grateful to Professor W. G. Spitzer of the University of Southern California for helpful discussion on optical properties of implanted silicon. The authors from IAP, Berne, are grateful to Professor H. P. Weber for his stimulating interest in this work.

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