Published February 1, 1969
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Journal Article
Open
Drift velocity of electrons in silicon at high electric fields from 4.2° to 300°K
- Creators
- Rodriguez, V.
- Nicolet, M-A.
Chicago
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Abstract
The drift velocity of electrons in silicon at high electric fields is measured in the <111> direction over the range of lattice temperatures from 4.2° to 300°K. It is established that in this range a limiting drift velocity exists. Its temperature dependence is measured. The samples used and the method of measurement are briefly described.
Additional Information
©1969 The American Institute of Physics. Received 9 September 1968. The structures were manufactured with the research facilities of Fairchild Semiconductor, Palo Alto. We thank C.A. Bittmann for making this possible. We also acknowledge the financial support of Fairchild Camera and Instrument, and the Naval Ordnance Test Station, Pasadena Annex.Files
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Additional details
- Eprint ID
- 11059
- Resolver ID
- CaltechAUTHORS:RODjap69
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2008-06-26Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field