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Published February 1, 1969 | public
Journal Article Open

Drift velocity of electrons in silicon at high electric fields from 4.2° to 300°K

Abstract

The drift velocity of electrons in silicon at high electric fields is measured in the <111> direction over the range of lattice temperatures from 4.2° to 300°K. It is established that in this range a limiting drift velocity exists. Its temperature dependence is measured. The samples used and the method of measurement are briefly described.

Additional Information

©1969 The American Institute of Physics. Received 9 September 1968. The structures were manufactured with the research facilities of Fairchild Semiconductor, Palo Alto. We thank C.A. Bittmann for making this possible. We also acknowledge the financial support of Fairchild Camera and Instrument, and the Naval Ordnance Test Station, Pasadena Annex.

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August 21, 2023
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