Published July 1982
| Published
Journal Article
Open
Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface
Abstract
Results of fully correlated theoretical ab initio calculations are reported [1] and compared with the following experiments: (i) Si(2p) core level shifts [2,3], (ii) the dispersion of dangling bond surfaces states [4], and (iii) angle-integrated ionization potentials (I.P.) from dangling bond orbials [5].
Additional Information
© 1982 American Vacuum Society. Received 1 February 1982; accepted 22 April 1982. This work was supported by a contract (No. N00014-79-C-0797) from the Office of Naval Research. Arthur Amos Noyes Laboratory of Chemical Physics, Contribution No. 6621.Attached Files
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Additional details
- Eprint ID
- 11315
- Resolver ID
- CaltechAUTHORS:REDjvst82c
- N00014-79-C-0797
- Office of Naval Research
- Created
-
2008-07-30Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field
- Other Numbering System Name
- WAG
- Other Numbering System Identifier
- 0170