Published August 1, 1984
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Journal Article
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Vertical field-effect transistors in III-V semiconductors
Abstract
Vertical metal-semiconductor field-effect transistors in GaAs/GaAlAs and vertical metal-oxide-semiconductor field-effect transistors (MOSFET's) in InP/GaInPAs materials have been fabricated. These structures make possible short channel devices with gate lengths defined by epitaxy rather than by submicron photolithography processes. Devices with transconductances as high as 280 mS/mm in GaAs and 60 mS/mm (with 100-nm gate oxide) for the InP/GaInPAs MOSFET's were observed.
Additional Information
Copyright © 1984 American Institute of Physics. Received 9 April 1984; accepted 8 May 1984. This work was supported by the Office of Naval Research, the Air Force Office of Scientific Research, and the Defense Advanced Projects Agency. Z. Rav-Noy would like to acknowledge the support of the Bantrell Fellowship.Files
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