Intersubband absorption in Si1–xGex/Si superlattices for long wavelength infrared detectors
- Creators
- Rajakarunanayake, Y.
- McGill, T. C.
Abstract
We have calculated the absorption strengths for intersubband transitions in n-type Si1–xGex/Si superlattices. These transitions can be used for the detection of long-wavelength infrared radiation. A significant advantage in Si1–xGex/Si superlattice detectors is the ability to detect normally incident light; in Ga1–xAlxAs/GaAs superlattices intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. We present detailed calculations of absorption coefficients, and peak absorption wavelengths for [100], [111], and [110] Si1–xGex/Si superlattices. Peak absorption strengths of about 2000–6000 cm^–1 were obtained for typical sheet doping concentrations ([approximately-equal-to]10^12 cm^–2). Absorption comparable to that in Ga1–xAlxAs/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.
Additional Information
© 1990 American Vacuum Society. (Received 31 January 1990; accepted 19 March 1990) This work was supported by the Defense Advanced Projects Agency, under Contract No. N00014-89-J-3196. We also like to acknowledge useful discussions with R.J. Hauenstein, E.T. Yu, R.H. Miles, and D.L. Smith.Files
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Additional details
- Eprint ID
- 10193
- Resolver ID
- CaltechAUTHORS:RAJjvstb90
- Created
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2008-04-16Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field