Si-Si1−xGex n-type resonant tunnel structures

Abstract

We report the first study of n-type Si-Si1−xGex resonant tunnel structures. Strain effects in these structures induce splittings of the sixfold conduction bands into twofold and fourfold states, and change the band-edge profiles considerably. We demonstrate that resonant tunneling due to twofold, fourfold, or twofold and fourfold electrons can be selectively achieved by a proper choice of the layer thicknesses and alloy concentrations in the barrier layers. The possibilities for using these phenomena for making electron filters and making accurate determinations of the band offsets are discussed.

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