Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published May 19, 2003 | Published
Journal Article Open

Nonlithographic epitaxial Sn_xGe_(1–x) dense nanowire arrays grown on Ge(001)

Abstract

We have grown 1-µm-thick Sn_xGe_(1–x)/Ge(001) epitaxial films with 0 < x < 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of Sn_xGe_(1–x) nanowires oriented along [001], as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated Sn_xGe_(1–x) alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition.

Additional Information

© 2003 American Institute of Physics. (Received 26 March 2002; accepted 29 January 2003) The National Science Foundation supported this work. One author (R. R.) acknowledges support in the form of an Intel fellowship.

Attached Files

Published - RAGapl03.pdf

Files

RAGapl03.pdf
Files (244.1 kB)
Name Size Download all
md5:66daa8169ad31b05902eaed49a0324a5
244.1 kB Preview Download

Additional details

Created:
August 22, 2023
Modified:
October 13, 2023