Published May 19, 2003
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Journal Article
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Nonlithographic epitaxial Sn_xGe_(1–x) dense nanowire arrays grown on Ge(001)
Chicago
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Abstract
We have grown 1-µm-thick Sn_xGe_(1–x)/Ge(001) epitaxial films with 0 < x < 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of Sn_xGe_(1–x) nanowires oriented along [001], as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated Sn_xGe_(1–x) alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition.
Additional Information
© 2003 American Institute of Physics. (Received 26 March 2002; accepted 29 January 2003) The National Science Foundation supported this work. One author (R. R.) acknowledges support in the form of an Intel fellowship.Attached Files
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Additional details
- Alternative title
- Nonlithographic epitaxial SnxGe1–x dense nanowire arrays grown on Ge(001)
- Eprint ID
- 2455
- Resolver ID
- CaltechAUTHORS:RAGapl03
- NSF
- Intel
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2006-04-04Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field