Published November 20, 2000
| Published
Journal Article
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Measurement of the direct energy gap of coherently strained Sn_xGe_(1–x)/Ge(001) heterostructures
- Creators
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Ragan, Regina
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Atwater, Harry A.
Chicago
Abstract
The direct energy gap has been measured for coherently strained Sn_xGe_(1–x) alloys on Ge(001) substrates with 0.035 < x < 0.115 and film thickness 50–200 nm. The energy gap determined from infrared transmittance data for coherently strained Sn_xGe_(1–x) alloys indicates a large alloy contribution and a small strain contribution to the decrease in direct energy gap with increasing Sn composition. These results are consistent with a deformation potential model for changes in the valence and conduction band density of states with coherency strain for this alloy system.
Additional Information
© 2000 American Institute of Physics. (Received 29 December 1999; accepted 20 September 2000)Attached Files
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Additional details
- Alternative title
- Measurement of the direct energy gap of coherently strained SnxGe1–x/Ge(001) heterostructures
- Eprint ID
- 2461
- Resolver ID
- CaltechAUTHORS:RAGapl00
- Created
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2006-04-04Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field