Published July 2003
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Journal Article
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Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection
Abstract
We report on the growth of thin layers of Fe3O4 on GaAs and InAs by pulsed laser deposition. It is found that Fe3O4 grows epitaxially on InAs at a temperature of 350 °C. X-ray photoelecton spectroscopy (XPS) studies of the interface show little if any interface reaction resulting in a clean epitaxial interface. In contrast, Fe3O4 grows in columnar fashion on GaAs, oriented with respect to the growth direction but with random orientation in the plane of the substrate. In this case XPS analysis showed much more evidence of interface reactions, which may contribute to the random-in-plane growth.
Additional Information
©2003 American Vacuum Society. (Received 19 January 2003; accepted 10 March 2003; published 5 August 2003) The authors gratefully acknowledge the financial support of the Defense Advanced Research Projects Agency under a grant monitored by Stuart Wolf and the Office of Naval Research under a grant monitored by Larry R. Cooper. Papers from the 30th Conference on the Physics and Chemistry of Semiconductor Interfaces: Magnetic Materials and SpintronicsFiles
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- CaltechAUTHORS:PREjvstb03
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2006-03-28Created from EPrint's datestamp field
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