Published 1997
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A 43-GHz AlInAs/GaInAs/InP HEMT grid oscillator
Abstract
A 36-element hybrid grid oscillator has been fabricated. The active devices are InP-based High Electron Mobility Transistors (HEMT's). The grid oscillates at 43 GHz with an effective radiated power of 200 mW. Measurements show the E and H-plane radiation patterns have side lobes 10 dB below the main beam. These results are a significant improvement over a previous millimeter-wave grid oscillator, which had a divided beam because of substrate modes
Additional Information
© Copyright 1997 IEEE. Reprinted with permission. We appreciate the support of the Army Research Office and the Physical Optics Corporation. We would like to thank Freddie Williams for his help on mounting and wire-bonding the devices to the grid.Files
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