Published December 15, 1983
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Journal Article
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Platinum diffusion into silicon from PtSi
- Creators
- Prabhakar, A.
- McGill, T. C.
- Nicolet, M.-A.
Abstract
We have observed platinum diffusion into the silicon underlying a PtSi film. Silicon substrates covered with platinum films were annealed at temperatures from 300 to 800°C to form the silicide. Backscattering spectrometry spectra show no degradation of the silicide in the samples treated below 700°C. Deep level transient spectroscopy (DLTS) was used to measure diffused platinum electron traps. Electron trap concentrations in samples treated below 700°C are below the DLTS detection limit of 5×10^11/cm^3. Trap concentration profiles for the samples annealed at higher temperatures were obtained. These profiles cannot in general be explained by simple diffusion from an infinite source of platinum at the surface.
Additional Information
Copyright © 1983 American Institute of Physics. Received 4 August 1983; accepted 26 September 1983. We would like to thank M. Finetti for her assistance. This work was supported in part by the Office of Naval Research under contract No. N00014-81-C-0285.Files
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