Bar-grid oscillators
Abstract
Grid oscillators are an attractive way of obtaining high power levels from the solid-state devices, since potentially the output powers of thousands of individual devices can be combined. The active devices do not require an external locking signal, and the power combining is done in free space. Thirty-six transistors were mounted on parallel brass bars, which provide a stable bias and have a low thermal resistance. The output power degraded gradually when the devices failed. The grid gave an effective radiated power of 3 W at 3 GHz. The directivity was 11.3 dB, and the DC-to-RF efficiency was 22%. Modulation capabilities of the grid were demonstrated. An equivalent circuit model for the grid is derived, and comparison with experimental results is shown.
Additional Information
© Copyright 1990 IEEE. Reprinted with permission Manuscript received August 10, 1989; revised November 6, 1989. This work was supported by the Army Research Office and the Northrop Corporation.Files
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- CaltechAUTHORS:POPieeetmtt90
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2006-05-19Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field