Published October 23, 1995
| public
Journal Article
Open
Sb-surfactant-mediated growth of Si/Si1–yCy superlattices by molecular-beam epitaxy
Abstract
Si/Si0.97C0.03 superlattices were grown on Si(001) substrates by molecular beam epitaxy (MBE) to study the use of Sb as a surfactant during Si1–yCy growth. In situ reflection high energy electron diffraction (RHEED) shows that while carbon easily disrupts the two-dimensional growth of homoepitaxial Si, such disruption is suppressed for layers grown on Sb-terminated Si(001) surfaces. Cross-sectional transmission electron microscopy (TEM) reveals that for samples grown without the use of Sb, the Si/Si0.97C0.03 interfaces (Si0.97C0.03 on Si) were much more abrupt than Si0.97C0.03/Si interfaces. In the case of Sb-mediated growth, differences in abruptness between the two types of interfaces were not readily observable.
Additional Information
©1995 American Institute of Physics. (Received 22 June 1995; accepted 16 August 1995) This study was supported in part by ONR N00014-93-1-0710. We are grateful for Carol Garland's assistance in obtaining the TEM images.Files
PETapl95.pdf
Files
(297.1 kB)
Name | Size | Download all |
---|---|---|
md5:8a2594d45f2abb3afa666ee116bf170a
|
297.1 kB | Preview Download |
Additional details
- Eprint ID
- 2488
- Resolver ID
- CaltechAUTHORS:PETapl95
- Created
-
2006-04-05Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field