Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors

Creators: Peralta, X. G.; Allen, S. J.; Wanke, M. C.; Harff, N. E.; Simmons, J. A.; Lilly, M. P.; Reno, J. L.; Burke, P. J.; Eisenstein, J. P.

Abstract

Double-quantum-well field-effect transistors with a grating gate exhibit a sharply resonant, voltage tuned terahertz photoconductivity. The voltage tuned resonance is determined by the plasma oscillations of the composite structure. The resonant photoconductivity requires a double-quantum well but the mechanism whereby plasma oscillations produce changes in device conductance is not understood. The phenomenon is potentially important for fast, tunable terahertz detectors.

Additional Information

©2002 American Institute of Physics. Received: 18 February 2002; accepted: 5 June 2002. The authors would like to thank D. Enyeart and G. Ramian at the Center for Terahertz Science and Technology and W. Baca at Sandia National Labs. This work was supported by the ONR MFEL program, the DARPA/ONR THz Technology, Sensing and Satellite Communications Program, and the ARO, Science and Technology of Nano/Molecular Electronics: Theory, Simulation, and Experimental Characterization. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract No. DEAC04-94AL85000.

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