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Published May 2008 | Published
Journal Article Open

A 90 nm CMOS 16 Gb/s Transceiver for Optical Interconnects

Abstract

Interconnect architectures which leverage high-bandwidth optical channels offer a promising solution to address the increasing chip-to-chip I/O bandwidth demands. This paper describes a dense, high-speed, and low-power CMOS optical interconnect transceiver architecture. Vertical-cavity surface-emitting laser (VCSEL) data rate is extended for a given average current and corresponding reliability level with a four-tap current summing FIR transmitter. A low-voltage integrating and double-sampling optical receiver front-end provides adequate sensitivity in a power efficient manner by avoiding linear high-gain elements common in conventional transimpedance-amplifier (TIA) receivers. Clock recovery is performed with a dual-loop architecture which employs baud-rate phase detection and feedback interpolation to achieve reduced power consumption, while high-precision phase spacing is ensured at both the transmitter and receiver through adjustable delay clock buffers. A prototype chip fabricated in 1 V 90 nm CMOS achieves 16 Gb/s operation while consuming 129 mW and occupying 0.105 mm^2.

Additional Information

© 2008 IEEE. Reprinted with permission. Manuscript received October 11, 2007; revised January 17, 2008. [Posted online: 2008-04-22] This work was supported by MARCO-IFC. Chip fabrication was provided by CMP and STMicroelectronics. The authors would like to acknowledge the help and support of D. Patil, B. Nezamfar, P. Chiang, and B. Gupta, CMP and STMicroelectronics for chip fabrication, ULM photonics for VCSELs, Albis Optoelectronics for photodiodes, and MARCO-IFC for funding. In addition, they would like to thank Prof. D. Miller and his research group for testing assistance. S. Palermo thanks Sh. Palermo for constant help and support.

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