Quantum-well capture and interwell transport in semiconductor active layers
- Creators
- Paiella, R.
- Hunziker, G.
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Vahala, K. J.
Abstract
The dynamics of electrons and holes in multiquantum-well semiconductor gain media involves several different transport processes, such as diffusion and drift across the barrier region, as well as capture and escape transitions between the bound and the unbound states of the quantum wells. In addition to their fundamental interest, these processes are important because of their implications for the dynamic properties of multiquantum-well lasers and optical amplifiers. Experimentally, they have been studied with several time-domain optical techniques having (sub)picosecond resolution and, more recently, with frequency-domain techniques based on laser modulation measurements. This article gives a brief review of the work done in this area and then presents in detail a frequency-domain approach, four-wave mixing spectroscopy in semiconductor optical amplifiers, to investigate intrinsic capture and interwell equilibration. This technique allows one to extend the device modulation frequency to several hundreds of gigahertz, thus providing the required time resolution, and can be configured to isolate and directly study the transport process of interest.
Additional Information
© Institute of Physics and IOP Publishing Limited 1999. Received 23 September 1998, accepted for publication 29 January 1999. Print publication: Issue 5 (May 1999). The authors would like to thank Ortel Corporation for the loan of certain components used in the experiments and Uzi Koren of Lucent Technologies for providing the SOAs. This work was supported by ARPA (Contract DAAL 01-94-K-03430) and the National Science Foundation (Grant ECS-9412862).Files
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Additional details
- Eprint ID
- 796
- Resolver ID
- CaltechAUTHORS:PAIsst99
- Created
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2005-10-05Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field