Published August 15, 2005
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Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy
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Abstract
We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.
Additional Information
©2005 American Institute of Physics (Received 17 March 2005; accepted 24 June 2005; published online 8 August 2005) The authors wish to thank Mr. A. Shvartser (Caltech) and Mr. K. Nishizuka (Kyoto University) for helping with the measurements. We also thank Professor H. Everitt (Duke Univ.) and Dr. J. Schilling (Caltech) for valuable discussions. A part of this study was supported by AFOSR for their support under Contract No. FA9550–04–1–0413.Files
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