Published May 15, 1974
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Journal Article
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Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugations
Chicago
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Abstract
Liquid phase epitaxy of GaAlAs was performed on GaAs fine surface corrugations. By optimizing the growth conditions, GaAlAs layers were grown successfully with only minimal meltback.
Additional Information
©1974 American Institute of Physics (Received 18 February 1974) The authors would like to thank Dr. Y. Otomo and Dr. O. Nakada of Central Research Laboratory, Hitachi Ltd., for their support of this work, T. Kajimura of the same laboratory and K. Evans of the California Institute of Technology for SEM photography, and A. Gover of the California Institute of Technology for helpful discussions.Files
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