Published September 1, 1986
| Published
Journal Article
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High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser
Chicago
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Abstract
Ultralow-power, high-resolution, pulsed-laser photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies were carried out in molecular-beam-epitaxial GaAs/AlxGa1−xAs multi-quantum-well structures at 5 K. Fine structures were observed for the first time in the PLE spectra, both in the heavy-hole and light-hole excitonic regions. Most of the fine structures are considered to arise from monolayer fluctuations in the thicknesses of the GaAs wells. Dramatic changes in the line shapes and the peak positions of the PL and PLE spectra were observed by applying selective PL detection and excitation spectroscopic techniques.
Additional Information
Copyright © 1986 American Institute of Physics. Received 13 January 1986; accepted 15 May 1986. We would like to acknowledge helpful discussions with Dr. D.C. Reynolds and Dr. J. Singh. One of us (M.N.) expresses his thanks to Dr. P.M. Petroff for illuminating discussions on MBE heterostructure interfaces. A critical reading of the manuscript by Dr. A. Fedotowsky is also appreciated. This work was supported by the Office of Naval Research and Air Force Office of Scientific Research.Attached Files
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Additional details
- Eprint ID
- 12041
- Resolver ID
- CaltechAUTHORS:NAGjap86
- Office of Naval Research
- Air Force Office of Scientific Research
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2008-10-21Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field