Published August 1, 1981
| public
Journal Article
Open
Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide
- Creators
- Moyer, R. H.
- Agmon, P.
- Koch, T. L.
- Yariv, A.
Chicago
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Abstract
The speed of opto-electronic switches is increased or decreased by the application of a magnetic field. This is achieved by inducing a carrier drift toward or away from the semiconductor surface, resulting in the enhancement or suppression of surface recombination. We establish that surface recombination plays a major role in determining the speed of the opto-electronic switch.
Additional Information
©1981 American Institute of Physics. Received 13 November 1980; accepted for publication 18 May 1981. This work was supported by a National Science Foundation Grant and a National Science Foundation Graduate Fellowship (T.L.K.).Files
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Additional details
- Eprint ID
- 9637
- Resolver ID
- CaltechAUTHORS:MOYapl81
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