Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructures
- Creators
- Monzon, F. G.
- Johnson, Mark
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Roukes, M. L.
Abstract
We present a new magnetoelectronic device consisting of a µm-scale semiconductor cross junction and a patterned, electrically isolated, ferromagnetic overlayer with in-plane magnetization. The large local magnetic field emanating from the edge of the thin ferromagnetic film has a strong perpendicular magnetic component, B[perpendicular](r), which induces a Hall resistance, RH, in the microjunction. External application of a weak in-plane magnetic field reverses the magnetization of the ferromagnet and with it B[perpendicular](r), thus modulating RH. Our data demonstrate that this strong "local" Hall effect is operative at both cryogenic and room temperatures, and is promising for device applications such as field sensors or integrated nonvolatile memory cells.
Additional Information
© 1997 American Institute of Physics. (Received 4 February 1997; accepted 19 September 1997) The authors thank A. N. Cleland for valuable suggestions in the course of both fabrication and measurement. We gratefully acknowledge support from the ONR under Grant Nos. N00014-96-1-0865 and N00014-96-WX21047, and from the Army NDSEG Fellowship Program.Attached Files
Published - MONapl97.pdf
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Additional details
- Eprint ID
- 2778
- Resolver ID
- CaltechAUTHORS:MONapl97
- Office of Naval Research (ONR)
- N00014-96-1-0865
- Office of Naval Research (ONR)
- N00014-96-WX21047
- National Defense Science and Engineering Graduate (NDSEG) Fellowship
- Created
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2006-04-26Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field